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| Transistor 2SA719, 2SA720 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1317 and 2SC1318 5.00.2 Unit: mm 4.00.2 q Complementary pair with 2SC1317 and 2SC1318. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SA719 2SA720 2SA719 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol (Ta=25C) Ratings -30 -60 -25 -50 -5 -1 -500 625 150 -55 ~ +150 Unit V 13.50.5 5.10.2 s Features 0.45 -0.1 1.27 +0.2 0.45 -0.1 1.27 +0.2 emitter voltage 2SA720 Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V A mA mW C C 2.540.15 123 2.30.2 1:Emitter 2:Collector 3:Base JEDEC:TO-92 EIAJ:SC-43A s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance *h (Ta=25C) Symbol ICBO Conditions VCB = -20V, IE = 0 IC = -10A, IE = 0 IC = -10mA, IB = 0 IE = -10A, IC = 0 VCE = -10V, IC = -150mA VCE = -10V, IC = -500mA IC = -300mA, IB = -30mA IC = -300mA, IB = -30mA VCB = -10V, IE = 50mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz -30 -60 -25 -50 -5 85 40 - 0.35 -1.1 200 6 15 - 0.6 -1.5 V V MHz pF 340 min typ max - 0.1 Unit A V 2SA719 2SA720 2SA719 2SA720 VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob * V V FE1 Rank classification Q 85 ~ 170 R 120 ~ 240 S 170 ~ 340 Rank hFE1 1 Transistor PC -- Ta 800 12 Ta=25C 700 10 -700 2SA719, 2SA720 IC -- VCE -800 VCE=-10V Ta=25C IC -- IB Collector power dissipation PC (mW) Collector current IC (mA) 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 8 IB=-1.0mA - 0.9mA - 0.8mA - 0.7mA - 0.6mA - 0.5mA - 0.4mA - 0.3mA - 0.2mA 6 4 2 - 0.1mA 0 0 2 4 6 8 10 12 -100 0 0 -2 -4 -6 -8 -10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (mA) -600 -500 -400 -300 -200 Base current IB (mA) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -10 -3 -1 VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 -100 -30 -10 -3 -1 Ta=-25C 75C IC/IB=10 600 hFE -- IC VCE=-10V Forward current transfer ratio hFE 500 400 - 0.3 - 0.1 - 0.03 - 0.01 25C Ta=75C 25C 300 Ta=75C 200 25C -25C 100 -25C - 0.3 - 0.1 - 0.03 - 0.01 -1 - 0.003 - 0.001 -1 -3 -10 -30 -100 -300 -1000 -3 -10 -30 -100 -300 -1000 0 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Collector current IC (mA) Collector current IC (mA) Collector current IC (A) fT -- IE 240 50 Cob -- VCB -120 VCER -- RBE Collector to emitter voltage VCER (V) IE=0 f=1MHz Ta=25C IC=-2mA Ta=25C Collector output capacitance Cob (pF) VCB=-10V Ta=25C 45 40 35 30 25 20 15 10 5 0 -1 Transition frequency fT (MHz) 200 -100 160 -80 120 -60 2SA720 -40 2SA719 -20 80 40 0 1 3 10 30 100 0 -3 -10 -30 -100 1 3 10 30 100 300 1000 Emitter current IE (mA) Collector to base voltage VCB (V) Base to emitter resistance RBE (k) 2 Transistor ICEO -- Ta 104 VCE=-10V -10 -3 2SA719, 2SA720 Area of safe operation (ASO) Single pulse Ta=25C Collector current IC (mA) 103 -1 ICP IC t=1s t=10ms ICEO (Ta) ICEO (Ta=25C) - 0.3 - 0.1 - 0.03 - 0.01 102 10 - 0.003 1 0 40 80 120 160 200 - 0.001 - 0.1 - 0.3 -1 -3 -10 -30 -100 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) 3 |
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